Mfr. Part
SI2335DS-T1-GE3
Manufacturer
Vishay / Siliconix
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Detailed Description
The SI2335DS-T1-GE3 is a P-channel enhancement-mode power MOSFET in a surface-mount SOT-23-3 (TO-236) package.
Key Features
P-Channel MOSFET
Low On-Resistance
High Current Capability
Surface Mount Package
Key Advantages
Efficient power switching
Compact and space-saving design
Reliable performance in a wide temperature range
Packaging
Package: SOT-23-3 (TO-236)
Encapsulation: Tape & Reel (TR)
Thermal Characteristics: Power Dissipation (Max) 750mW (Ta)
Electrical Properties: Drain to Source Voltage (Vdss) 12V, Current Continuous Drain (Id) @ 25°C 3.2A (Ta), Rds On (Max) @ Id, Vgs 51 mOhm @ 4A, 4.5V
Lifecycle
This product is an active and available part.
There are equivalent or alternative models available. Please contact our sales team via our website for more information.
Key Application Areas
Power management circuits
Switching applications
Battery-powered devices
Datasheet
The most authoritative datasheet for the SI2335DS-T1-GE3 is available on our website. Customers are recommended to download it for complete technical details.
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